IRFP362
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$4.21
Available to order
Reference Price (USD)
1+
$4.21000
500+
$4.1679
1000+
$4.1258
1500+
$4.0837
2000+
$4.0416
2500+
$3.9995
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IRFP362, a high-quality Transistors - FETs, MOSFETs - Single from Harris Corporation. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IRFP362 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
Toshiba Semiconductor and Storage
TK190E65Z,S1X
IXYS
IXFQ80N25X3
Diodes Incorporated
DMTH6004SPS-13
IXYS
IXTY08N100D2-TRL
Vishay Siliconix
SI3456DDV-T1-BE3
Infineon Technologies
IMW65R083M1HXKSA1
Renesas Electronics America Inc
2SK1313STR-E
Diodes Incorporated
DMN6070SY-13
onsemi
NVMFS5H610NLWFT1G
Micro Commercial Co