IPL65R160CFD7AUMA1
Infineon Technologies
Infineon Technologies
COOLMOS CFD7 SUPERJUNCTION MOSFE
$5.10
Available to order
Reference Price (USD)
1+
$5.10000
500+
$5.049
1000+
$4.998
1500+
$4.947
2000+
$4.896
2500+
$4.845
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPL65R160CFD7AUMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPL65R160CFD7AUMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 98W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-VSON-4
- Package / Case: 4-PowerTSFN
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