WPB4002-1E
onsemi
onsemi
MOSFET N-CH 600V 23A TO3P-3L
$2.87
Available to order
Reference Price (USD)
1+
$2.87000
500+
$2.8413
1000+
$2.8126
1500+
$2.7839
2000+
$2.7552
2500+
$2.7265
Exquisite packaging
Discount
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Boost your electronic applications with WPB4002-1E, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, WPB4002-1E meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P-3L
- Package / Case: TO-3P-3, SC-65-3
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