IPL60R360P6SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 11.3A 8THINPAK
$2.44
Available to order
Reference Price (USD)
5,000+
$0.78207
10,000+
$0.76566
Exquisite packaging
Discount
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Experience the power of IPL60R360P6SATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPL60R360P6SATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 370µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 89.3W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-ThinPak (5x6)
- Package / Case: 8-PowerTDFN
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