PJD12P06-AU_L2_000A1
Panjit International Inc.
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
$0.99
Available to order
Reference Price (USD)
1+
$0.99000
500+
$0.9801
1000+
$0.9702
1500+
$0.9603
2000+
$0.9504
2500+
$0.9405
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose PJD12P06-AU_L2_000A1 by Panjit International Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with PJD12P06-AU_L2_000A1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NVTFS007N08HLTAG
onsemi
NTDV5805NT4G
Vishay Siliconix
SI4838BDY-T1-GE3
Infineon Technologies
IGO60R070D1AUMA1
STMicroelectronics
STU7NF25
onsemi
FDD4141
IXYS
IXTY02N120P
Vishay Siliconix
SQJ160EP-T1_GE3
Vishay Siliconix
SIHU7N60E-GE3
Renesas Electronics America Inc