IPD30N10S3L34ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 30A TO252-3
$1.64
Available to order
Reference Price (USD)
2,500+
$0.41241
5,000+
$0.39179
12,500+
$0.37706
25,000+
$0.37492
Exquisite packaging
Discount
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IPD30N10S3L34ATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPD30N10S3L34ATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 29µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1976 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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