IRF3703PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 210A TO220AB
$3.97
Available to order
Reference Price (USD)
1+
$3.31000
10+
$2.95600
100+
$2.42410
500+
$1.96296
1,000+
$1.65550
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IRF3703PBF, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IRF3703PBF for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 76A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Diodes Incorporated
ZXMN2A01FTA
onsemi
FCP150N65F
Infineon Technologies
IPD60R2K1CEAUMA1
Fairchild Semiconductor
SSP1N50B
Infineon Technologies
IRL40SC209
STMicroelectronics
STB18NM60ND
Rohm Semiconductor
RU1C002ZPTCL
Panjit International Inc.
PJD6N10A_L2_00001
Nexperia USA Inc.
BSP230,135
Panjit International Inc.