IPD11DP10NMATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO252-3
$2.01
Available to order
Reference Price (USD)
1+
$2.01000
500+
$1.9899
1000+
$1.9698
1500+
$1.9497
2000+
$1.9296
2500+
$1.9095
Exquisite packaging
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Enhance your circuit performance with IPD11DP10NMATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPD11DP10NMATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 111mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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