TPH3R203NL,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 47A 8SOP
$1.19
Available to order
Reference Price (USD)
5,000+
$0.46060
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TPH3R203NL,L1Q by Toshiba Semiconductor and Storage. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TPH3R203NL,L1Q inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 23.5A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 44W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
Related Products
Vishay Siliconix
SQJ479EP-T1_GE3
Diodes Incorporated
DMP45H4D9HK3-13
STMicroelectronics
STW50N65DM2AG
Panjit International Inc.
PJP7NA60_T0_00001
Rectron USA
RM150N150HD
Fairchild Semiconductor
FDB2670
Vishay Siliconix
SIHB22N60EL-GE3
Infineon Technologies
IPA70R900P7SXKSA1
Infineon Technologies
IRFP3703PBF
Fairchild Semiconductor