IPB45P03P4L11ATMA2
Infineon Technologies
Infineon Technologies
MOSFET_(20V 40V) PG-TO263-3
$1.40
Available to order
Reference Price (USD)
1+
$1.39760
500+
$1.383624
1000+
$1.369648
1500+
$1.355672
2000+
$1.341696
2500+
$1.32772
Exquisite packaging
Discount
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Boost your electronic applications with IPB45P03P4L11ATMA2, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPB45P03P4L11ATMA2 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 2V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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