IPA60R099P6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 37.9A TO220-FP
$7.83
Available to order
Reference Price (USD)
1+
$6.32000
10+
$5.68300
100+
$4.72620
500+
$3.89694
1,000+
$3.34409
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPA60R099P6XKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPA60R099P6XKSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
Related Products
Diodes Incorporated
ZVN4206AV
Infineon Technologies
IPW60R070P6XKSA1
Texas Instruments
CSD18502Q5B
Rohm Semiconductor
SCT3160KW7TL
UnitedSiC
UF3SC120016K4S
Fairchild Semiconductor
FQPF5N60CYDTU
Renesas Electronics America Inc
2SK2090-T2-A
Vishay Siliconix
SQ2364EES-T1_GE3
Alpha & Omega Semiconductor Inc.
AOD409
NXP USA Inc.