ZVN4206AV
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 600MA TO92-3
$0.82
Available to order
Reference Price (USD)
1+
$0.88000
10+
$0.77000
100+
$0.60230
500+
$0.45600
1,000+
$0.37240
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated presents ZVN4206AV, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, ZVN4206AV delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Related Products
Infineon Technologies
IPW60R070P6XKSA1
Texas Instruments
CSD18502Q5B
Rohm Semiconductor
SCT3160KW7TL
UnitedSiC
UF3SC120016K4S
Fairchild Semiconductor
FQPF5N60CYDTU
Renesas Electronics America Inc
2SK2090-T2-A
Vishay Siliconix
SQ2364EES-T1_GE3
Alpha & Omega Semiconductor Inc.
AOD409
NXP USA Inc.
BUK7516-55A,127
onsemi