IPA082N10NF2SXKSA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO220-3
$1.87
Available to order
Reference Price (USD)
1+
$1.87000
500+
$1.8513
1000+
$1.8326
1500+
$1.8139
2000+
$1.7952
2500+
$1.7765
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IPA082N10NF2SXKSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPA082N10NF2SXKSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 46µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
Goford Semiconductor
45P40
Infineon Technologies
IPL60R125C7AUMA1
Infineon Technologies
IRFZ44ESTRLPBF
Vishay Siliconix
SQD10N30-330H_GE3
Infineon Technologies
IPA60R145CFD7XKSA1
Toshiba Semiconductor and Storage
TK31J60W5,S1VQ
Rohm Semiconductor
RQ6E040XNTCR
onsemi
FQA8N90C-F109
STMicroelectronics
STP40NF10L
onsemi