IMZA120R014M1HXKSA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$55.86
Available to order
Reference Price (USD)
1+
$55.86000
500+
$55.3014
1000+
$54.7428
1500+
$54.1842
2000+
$53.6256
2500+
$53.067
Exquisite packaging
Discount
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Optimize your electronic systems with IMZA120R014M1HXKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IMZA120R014M1HXKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 4580 nF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 455W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-8
- Package / Case: TO-247-4
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