IMW120R014M1HXKSA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$53.30
Available to order
Reference Price (USD)
1+
$53.30000
500+
$52.767
1000+
$52.234
1500+
$51.701
2000+
$51.168
2500+
$50.635
Exquisite packaging
Discount
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Discover IMW120R014M1HXKSA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 4580 nF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 455W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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