IMBG120R060M1HXTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 36A TO263
$17.71
Available to order
Reference Price (USD)
1+
$17.71000
500+
$17.5329
1000+
$17.3558
1500+
$17.1787
2000+
$17.0016
2500+
$16.8245
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IMBG120R060M1HXTMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IMBG120R060M1HXTMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
- Vgs (Max): +18V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 181W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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