YJQ3622A-F1-1100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 30V 30A DFN3333-8L
$0.58
Available to order
Reference Price (USD)
1+
$0.58000
500+
$0.5742
1000+
$0.5684
1500+
$0.5626
2000+
$0.5568
2500+
$0.551
Exquisite packaging
Discount
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YJQ3622A-F1-1100HF by Yangzhou Yangjie Electronic Technology Co.,Ltd is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, YJQ3622A-F1-1100HF ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 15 V
- FET Feature: Standard
- Power Dissipation (Max): 21W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3.3x3.3)
- Package / Case: 8-PowerVDFN
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