IKW50N65SS5XKSA1
Infineon Technologies
Infineon Technologies
INDUSTRY 14
$12.79
Available to order
Reference Price (USD)
1+
$12.79000
500+
$12.6621
1000+
$12.5342
1500+
$12.4063
2000+
$12.2784
2500+
$12.1505
Exquisite packaging
Discount
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The IKW50N65SS5XKSA1 Single IGBT from Infineon Technologies redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Infineon Technologies stands behind every IKW50N65SS5XKSA1 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
- Power - Max: 274 W
- Switching Energy: 320µJ (on), 550µJ (off)
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 20ns/140ns
- Test Condition: 400V, 50A, 9Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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