RGS80TSX2DHRC11
Rohm Semiconductor
Rohm Semiconductor
1200V 40A FIELD STOP TRENCH IGBT
$12.74
Available to order
Reference Price (USD)
1+
$12.74000
500+
$12.6126
1000+
$12.4852
1500+
$12.3578
2000+
$12.2304
2500+
$12.103
Exquisite packaging
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Upgrade your power electronics with RGS80TSX2DHRC11 Single IGBTs by Rohm Semiconductor, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Rohm Semiconductor for top-quality components that meet global standards. Request a quote now to learn more about how RGS80TSX2DHRC11 can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 555 W
- Switching Energy: 3mJ (on), 3.1mJ (off)
- Input Type: Standard
- Gate Charge: 104 nC
- Td (on/off) @ 25°C: 49ns/199ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 198 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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