IKW30N65NL5
Infineon Technologies
Infineon Technologies
IKW30N65 - DISCRETE IGBT WITH AN
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The IKW30N65NL5 Single IGBT by Infineon Technologies sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Infineon Technologies for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
- Power - Max: 227 W
- Switching Energy: 560µJ (on), 1.35mJ (off)
- Input Type: Standard
- Gate Charge: 168 nC
- Td (on/off) @ 25°C: 59ns/283ns
- Test Condition: 400V, 30A, 23Ohm, 15V
- Reverse Recovery Time (trr): 59 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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