AIHD15N60RATMA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 600V TO252-3
$0.00
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Reference Price (USD)
2,500+
$1.27774
Exquisite packaging
Discount
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The AIHD15N60RATMA1 Single IGBT from Infineon Technologies delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Infineon Technologies's commitment to innovation ensures AIHD15N60RATMA1 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 250 W
- Switching Energy: 370µJ (on), 530µJ (off)
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 16ns/183ns
- Test Condition: 400V, 15A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-313
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