IKW03N120H2
Infineon Technologies
Infineon Technologies
IGBT WITH ANTI-PARALLEL DIODE
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power electronics with IKW03N120H2 Single IGBTs by Infineon Technologies, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Infineon Technologies for top-quality components that meet global standards. Request a quote now to learn more about how IKW03N120H2 can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 9.6 A
- Current - Collector Pulsed (Icm): 9.9 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
- Power - Max: 62.5 W
- Switching Energy: 290µJ
- Input Type: Standard
- Gate Charge: 22 nC
- Td (on/off) @ 25°C: 9.2ns/281ns
- Test Condition: 800V, 3A, 82Ohm, 15V
- Reverse Recovery Time (trr): 42 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
Related Products
Microchip Technology
APT15GT60BRG
Infineon Technologies
IRG4BC10KPBF
STMicroelectronics
STGW35NB60S
Infineon Technologies
IRGS6B60KPBF
Microchip Technology
APT102GA60B2
onsemi
NGTB03N60R2DT4G
IXYS
IXGR50N60B2D1
Fairchild Semiconductor
FGB30N6S2T
onsemi
SGL60N90DG3TU
Microsemi Corporation