NGTB03N60R2DT4G
onsemi
onsemi
IGBT 9A 600V DPAK
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Optimize power control with NGTB03N60R2DT4G Single IGBTs from onsemi, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. onsemi ensures NGTB03N60R2DT4G meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 9 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
- Power - Max: 49 W
- Switching Energy: 50µJ (on), 27µJ (off)
- Input Type: Standard
- Gate Charge: 17 nC
- Td (on/off) @ 25°C: 27ns/59ns
- Test Condition: 300V, 3A, 30Ohm, 15V
- Reverse Recovery Time (trr): 65 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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