IHY20N135R3XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1350V 40A 310W TO247HC-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize power control with IHY20N135R3XKSA1 Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures IHY20N135R3XKSA1 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
- Power - Max: 310 W
- Switching Energy: 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 195 nC
- Td (on/off) @ 25°C: -/335ns
- Test Condition: 600V, 20A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PG-TO247HC-3
Related Products
Infineon Technologies
SIGC10T60EX7SA1
Littelfuse Inc.
LGB8245TI
Infineon Technologies
FS100R07N2E4
Infineon Technologies
IRGC14C40LD
Infineon Technologies
IGC193T120T12RMAX7SA1
Infineon Technologies
SIGC18T60NCX7SA1
Infineon Technologies
SIGC14T60NCX1SA1
Infineon Technologies
SKW04N120FKSA1
Renesas Electronics America Inc
RJP65T54DPM-E0#T2
IXYS