RJP65T54DPM-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH TO-3FP
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The RJP65T54DPM-E0#T2 Single IGBT by Renesas Electronics America Inc is a game-changer for energy-efficient systems. Ideal for HVAC, robotics, and power distribution, it boasts fast turn-off times and low gate drive requirements. Its advanced technology reduces energy waste and improves system longevity. Trust Renesas Electronics America Inc for premium-quality transistors backed by exceptional support. Request a sample or quote now to start your next innovation!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
- Power - Max: 63.5 W
- Switching Energy: 330µJ (on), 760µJ (off)
- Input Type: Standard
- Gate Charge: 72 nC
- Td (on/off) @ 25°C: 35ns/120ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PF
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