IGW50N60T
Infineon Technologies
Infineon Technologies
IGW50N60 - DISCRETE IGBT WITHOUT
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Enhance your electronic designs with IGW50N60T Single IGBTs from Infineon Technologies, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Infineon Technologies's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 333 W
- Switching Energy: 1.2mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 310 nC
- Td (on/off) @ 25°C: 26ns/299ns
- Test Condition: 400V, 50A, 7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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