IAUZ40N10S5L120ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_(75V 120V( PG-TSDSON-8
$0.71
Available to order
Reference Price (USD)
1+
$0.70540
500+
$0.698346
1000+
$0.691292
1500+
$0.684238
2000+
$0.677184
2500+
$0.67013
Exquisite packaging
Discount
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Optimize your electronic systems with IAUZ40N10S5L120ATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IAUZ40N10S5L120ATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-33
- Package / Case: 8-PowerTDFN
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