BSS123IXTMA1
Infineon Technologies
Infineon Technologies
100V N-CH SMALL SIGNAL MOSFET IN
$0.42
Available to order
Reference Price (USD)
1+
$0.42000
500+
$0.4158
1000+
$0.4116
1500+
$0.4074
2000+
$0.4032
2500+
$0.399
Exquisite packaging
Discount
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Enhance your circuit performance with BSS123IXTMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust BSS123IXTMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3-U01
- Package / Case: TO-236-3, SC-59, SOT-23-3
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