IAUC60N06S5L073ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_)40V 60V) PG-TDSON-8
$0.64
Available to order
Reference Price (USD)
1+
$0.63520
500+
$0.628848
1000+
$0.622496
1500+
$0.616144
2000+
$0.609792
2500+
$0.60344
Exquisite packaging
Discount
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Boost your electronic applications with IAUC60N06S5L073ATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IAUC60N06S5L073ATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 19µA
- Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
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