DMTH8012LPSW-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 80V 53.7A PWRDI5060
$0.39
Available to order
Reference Price (USD)
2,500+
$0.41967
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of DMTH8012LPSW-13, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMTH8012LPSW-13 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
Related Products
STMicroelectronics
STU3N65M6
Diodes Incorporated
DMNH6009SPS-13
Diodes Incorporated
DMN2055UW-7
Micro Commercial Co
MCU60N02-TP
Diodes Incorporated
DMT67M8LCG-13
Sanyo
FW705-TL-E
Vishay Siliconix
SIHFU9220-GE3
Infineon Technologies
IPN50R650CEATMA1
Micro Commercial Co
MCB70N10YB-TP
Renesas Electronics America Inc