SCT4018KRC15
Rohm Semiconductor
Rohm Semiconductor
1200V, 18M, 4-PIN THD, TRENCH-ST
$44.78
Available to order
Reference Price (USD)
1+
$44.78000
500+
$44.3322
1000+
$43.8844
1500+
$43.4366
2000+
$42.9888
2500+
$42.541
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SCT4018KRC15 by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SCT4018KRC15 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
- Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
- Vgs (Max): +21V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 312W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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