DMT3011LDT-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 8A V-DFN3030-8
$0.97
Available to order
Reference Price (USD)
3,000+
$0.40388
6,000+
$0.37913
15,000+
$0.36675
30,000+
$0.36000
Exquisite packaging
Discount
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Enhance your electronic applications with Diodes Incorporated s DMT3011LDT-7, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of DMT3011LDT-7 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A, 10.7A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
- Power - Max: 1.9W
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: V-DFN3030-8 (Type K)
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