HGTP2N120CN
onsemi
onsemi
IGBT 1200V 13A 104W TO220AB
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Upgrade your power electronics with HGTP2N120CN Single IGBTs by onsemi, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust onsemi for top-quality components that meet global standards. Request a quote now to learn more about how HGTP2N120CN can enhance your projects.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 13 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
- Power - Max: 104 W
- Switching Energy: 96µJ (on), 355µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 25ns/205ns
- Test Condition: 960V, 2.6A, 51Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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