IXSQ20N60B2D1
IXYS
IXYS
IGBT 600V 35A 190W TO3P
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXSQ20N60B2D1 Single IGBT by IXYS sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with IXYS for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 35 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
- Power - Max: 190 W
- Switching Energy: 380µJ (off)
- Input Type: Standard
- Gate Charge: 33 nC
- Td (on/off) @ 25°C: 30ns/116ns
- Test Condition: -
- Reverse Recovery Time (trr): 30 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
Infineon Technologies
SGW20N60HSFKSA1
Infineon Technologies
IKB20N60TAATMA1372
Infineon Technologies
IRGPC40S
IXYS
IXGC16N60B2
IXYS
IXGH72N60C3
STMicroelectronics
STGW50H60DF
Infineon Technologies
IRG4BC10SD-SPBF
onsemi
FGHL40S65UQ
Infineon Technologies
IRG4BC30KDSTRRP
Infineon Technologies