NGTD13T65F2SWK
onsemi
onsemi
IGBT TRENCH FIELD STOP 650V DIE
$1.62
Available to order
Reference Price (USD)
188+
$1.86122
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NGTD13T65F2SWK Single IGBT by onsemi sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with onsemi for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Last Time Buy
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
Harris Corporation
HGT1S7N60B3
Infineon Technologies
DF300R07PE4_B6
IXYS
IXYR100N65A3V1
onsemi
FGHL75T65MQDT
Renesas Electronics America Inc
RJP43F4ADPP-MB#T2F
Alpha & Omega Semiconductor Inc.
AOK30B135D2
Toshiba Semiconductor and Storage
GT50N322A
IXYS
IXXT100N75B4HV
Infineon Technologies
IRGB4060DPBF
IXYS