HGTG12N60C3D
Harris Corporation

Harris Corporation
UFS SERIES N-CH IGBT
$0.00
Available to order
Reference Price (USD)
1+
$6.69000
10+
$6.00900
450+
$4.67113
900+
$4.19139
1,350+
$3.53491
Exquisite packaging
Discount
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Maximize energy efficiency with HGTG12N60C3D Single IGBTs by Harris Corporation, a trusted name in discrete semiconductors. Suitable for solar inverters, motor controllers, and more, these transistors feature low conduction loss and high switching frequency. Their robust design ensures long-term performance even in harsh environments. Choose HGTG12N60C3D for your next project and experience the Harris Corporation difference. Submit your inquiry today for expert assistance!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 24 A
- Current - Collector Pulsed (Icm): 96 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
- Power - Max: 104 W
- Switching Energy: 380µJ (on), 900µJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 42 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247