STGW80H65FB-4
STMicroelectronics
STMicroelectronics
IGBT BIPO 650V 80A TO247
$0.00
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Reference Price (USD)
600+
$9.41875
Exquisite packaging
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The STGW80H65FB-4 Single IGBT by STMicroelectronics sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with STMicroelectronics for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Power - Max: 469 W
- Switching Energy: 2.1mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 414 nC
- Td (on/off) @ 25°C: 84ns/280ns
- Test Condition: 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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