RJH60D7DPM-00#T1
Renesas Electronics America Inc

Renesas Electronics America Inc
IGBT 600V 90A 55W TO3PFM
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance RJH60D7DPM-00#T1 Single IGBTs from Renesas Electronics America Inc, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, RJH60D7DPM-00#T1 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 55 W
- Switching Energy: 1.1mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 130 nC
- Td (on/off) @ 25°C: 60ns/190ns
- Test Condition: 300V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3PFM