GT10G131(TE12L,Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT 400V 1W 8-SOIC
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Choose GT10G131(TE12L,Q) Single IGBTs by Toshiba Semiconductor and Storage for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Toshiba Semiconductor and Storage's reputation for quality makes GT10G131(TE12L,Q) a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A
- Power - Max: 1 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 3.1µs/2µs
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP (5.5x6.0)
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