FGH25N120FTDS
onsemi
onsemi
IGBT 1200V 50A 313W TO247
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$8.26000
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Choose FGH25N120FTDS Single IGBTs by onsemi for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. onsemi's reputation for quality makes FGH25N120FTDS a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
- Power - Max: 313 W
- Switching Energy: 1.42mJ (on), 1.16mJ (off)
- Input Type: Standard
- Gate Charge: 169 nC
- Td (on/off) @ 25°C: 26ns/151ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 535 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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