GCMS080B120S1-E1
SemiQ
SemiQ
SIC 1200V 80M MOSFET & 10A SBD S
$25.96
Available to order
Reference Price (USD)
1+
$25.96000
500+
$25.7004
1000+
$25.4408
1500+
$25.1812
2000+
$24.9216
2500+
$24.662
Exquisite packaging
Discount
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Boost your electronic applications with GCMS080B120S1-E1, a reliable Transistors - FETs, MOSFETs - Single by SemiQ. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, GCMS080B120S1-E1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1374 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 142W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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