BSC012N06NSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 100A TSON-8
$4.59
Available to order
Reference Price (USD)
5,000+
$1.60681
Exquisite packaging
Discount
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Boost your electronic applications with BSC012N06NSATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, BSC012N06NSATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 306A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 147µA
- Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-3
- Package / Case: 8-PowerTDFN
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