GA04JT17-247
GeneSiC Semiconductor
GeneSiC Semiconductor
TRANS SJT 1700V 4A TO247AB
$0.00
Available to order
Reference Price (USD)
1+
$32.23000
10+
$29.81500
30+
$27.39733
120+
$25.46325
270+
$23.36819
Exquisite packaging
Discount
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Discover GA04JT17-247, a versatile Transistors - FETs, MOSFETs - Single solution from GeneSiC Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: -
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 480mOhm @ 4A
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 106W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AB
- Package / Case: TO-247-3
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