SI1431DH-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 1.7A SC70-6
$0.00
Available to order
Reference Price (USD)
3,000+
$0.23925
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SI1431DH-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SI1431DH-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
STMicroelectronics
STB60NH02LT4
onsemi
NVMFS5830NLWFT1G
Infineon Technologies
IRFH5303TR2PBF
Diodes Incorporated
DMP210DUFB4-7B
onsemi
FCH099N65S3_F155
NXP USA Inc.
BUK9E1R8-40E,127
Taiwan Semiconductor Corporation
TSM4459CS RLG
Infineon Technologies
IRFS33N15D
IXYS
IXTR90P10P
NXP USA Inc.