G60N04K
Goford Semiconductor
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
$0.78
Available to order
Reference Price (USD)
1+
$0.78000
500+
$0.7722
1000+
$0.7644
1500+
$0.7566
2000+
$0.7488
2500+
$0.741
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of G60N04K, a premium Transistors - FETs, MOSFETs - Single from Goford Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, G60N04K is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 65W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SUM110P08-11L-E3
STMicroelectronics
STB14NM50N
IXYS
IXFX52N100X
Infineon Technologies
IPAW60R180P7SXKSA1
Rohm Semiconductor
SCT3105KW7TL
Diodes Incorporated
DMT3006LFVQ-13
Vishay Siliconix
SIHW61N65EF-GE3
Infineon Technologies
BSL606SNH6327XTSA1
Microchip Technology
DN2535N5-G
onsemi