G48N03D3
Goford Semiconductor
Goford Semiconductor
N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
$0.66
Available to order
Reference Price (USD)
1+
$0.66000
500+
$0.6534
1000+
$0.6468
1500+
$0.6402
2000+
$0.6336
2500+
$0.627
Exquisite packaging
Discount
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Boost your electronic applications with G48N03D3, a reliable Transistors - FETs, MOSFETs - Single by Goford Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, G48N03D3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1784 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3.15x3.05)
- Package / Case: 8-PowerVDFN
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