NVMFWS016N10MCLT1G
onsemi
onsemi
PTNG 100V LL SO8FL
$0.56
Available to order
Reference Price (USD)
1+
$0.55555
500+
$0.5499945
1000+
$0.544439
1500+
$0.5388835
2000+
$0.533328
2500+
$0.5277725
Exquisite packaging
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Discover high-performance NVMFWS016N10MCLT1G from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NVMFWS016N10MCLT1G delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 3V @ 64µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Package / Case: 8-PowerTDFN, 5 Leads
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