G3S06506B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 3-PIN
$5.36
Available to order
Reference Price (USD)
1+
$5.36000
500+
$5.3064
1000+
$5.2528
1500+
$5.1992
2000+
$5.1456
2500+
$5.092
Exquisite packaging
Discount
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The G3S06506B by Global Power Technology-GPT is a top choice in the Discrete Semiconductor Products sector, particularly for Diodes - Rectifiers - Arrays. These diodes are designed to meet the highest standards of performance and reliability, offering features like low forward drop and high reverse voltage. Ideal for power supplies, inverters, and more, the G3S06506B ensures efficient energy conversion. Global Power Technology-GPT prides itself on delivering products that exceed expectations. Reach out to us today to discuss your project requirements!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 14A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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Global Power Technology-GPT