G3S12030B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 30A 3-P
$40.97
Available to order
Reference Price (USD)
1+
$40.97000
500+
$40.5603
1000+
$40.1506
1500+
$39.7409
2000+
$39.3312
2500+
$38.9215
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The G3S12030B by Global Power Technology-GPT is a top choice in the Discrete Semiconductor Products sector, particularly for Diodes - Rectifiers - Arrays. These diodes are designed to meet the highest standards of performance and reliability, offering features like low forward drop and high reverse voltage. Ideal for power supplies, inverters, and more, the G3S12030B ensures efficient energy conversion. Global Power Technology-GPT prides itself on delivering products that exceed expectations. Reach out to us today to discuss your project requirements!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 42A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
Related Products
Infineon Technologies
BAW56UE6327HTSA1
Yangzhou Yangjie Electronic Technology Co.,Ltd
MBR20200CT-B1-0000
STMicroelectronics
STTH20004TV1
Rohm Semiconductor
SCS240AE2HRC11
Vishay General Semiconductor - Diodes Division
BYT28F-300-E3/45
Vishay General Semiconductor - Diodes Division
VS-16CTU04-1-M3
Power Integrations
LQA20N200C
Infineon Technologies
BAS70-06WH6327
Vishay General Semiconductor - Diodes Division
VS-6CWH02FN-M3
Panjit International Inc.