G3R40MT12J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 75A TO263-7
$19.05
Available to order
Reference Price (USD)
1+
$19.05000
500+
$18.8595
1000+
$18.669
1500+
$18.4785
2000+
$18.288
2500+
$18.0975
Exquisite packaging
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Boost your electronic applications with G3R40MT12J, a reliable Transistors - FETs, MOSFETs - Single by GeneSiC Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, G3R40MT12J meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 374W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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